INFLUENCE OF H ON LOW-TEMPERATURE SI(111) HOMOEPITAXY

被引：13

作者：

HORNVONHOEGEN, M

GOLLA, A

机构：

[1] Institut für Festkörperphysik, Universität Hannover, D-30167 Hannover

来源：

SURFACE SCIENCE | 1995年 / 337卷 / 1-2期

关键词：

AMORPHOUS SURFACES; CRYSTALLINE-AMORPHOUS INTERFACES; EPITAXY; GROWTH; HYDROGEN; LOW ENERGY ELECTRON DIFFRACTION (LEED); LOW INDEX SINGLE CRYSTAL SURFACES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTING SURFACES; SEMICONDUCTOR-SEMICONDUCTOR INTERFACES; SEMICONDUCTOR-SEMICONDUCTOR THIN FILM STRUCTURES; SILICON; SINGLE CRYSTAL EPITAXY; SURFACE DEFECTS; SURFACE DIFFUSION; SURFACE STRUCTURE;

D O I：

10.1016/0039-6028(95)80036-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Molecular beam homoepitaxy on H terminated Si(111)-(1 x 1) surfaces has been studied by high resolution low energy electron diffraction (LEED). Exponentially decaying LEED intensity oscillations reflect the formation of an increasingly rough growth front during Si deposition. For temperatures below 480 degrees C bullr defects are generated which finally lead to non crystalline films. The strong influence of H (even submonolayer coverages) on the growth behaviour is attributed to the high binding energy of 3.1 eV of the H-Si bond, which hinders the place exchange process during growth.

引用

页码：L777 / L782

页数：6

共 32 条

[1] NUCLEATION AND GROWTH DURING MOLECULAR-BEAM EPITAXY (MBE) OF SI ON SI(111) [J].