REAL-TIME MONOLAYER GROWTH OSCILLATIONS DETECTED BY RD AT PRESSURES UP TO LP-MOVPE

被引：11

作者：

JONSSON, J

DEPPERT, K

SAMUELSON, L

机构：

[1] Department of Solid State Physics, University of Lund, S-221 00 Lund

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 124卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90433-J

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on reflectance-difference (RD) probing of the surface chemistry during epitaxial growth of GaAs on (001) oriented GaAs. Growth oscillations corresponding to monolayer-by-monolayer growth could be followed for pressures varying over three orders of magnitude, from the 10(-3) mbar range to 0.3 mbar. The oscillation amplitude and the average RD level during growth has been studied as a function of pressure, temperature and V/III ratio, facilitating quantitative estimations of the variation of the surface stoichiometry during growth. Furthermore, these studies indicate that it can be possible to obtain growth oscillations also in conventional low-pressure metalorganic vapour phase epitaxy, but in a more narrow range of V/III ratios than for vacuum conditions.

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页码：30 / 36

页数：7

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