DIRECT OBSERVATION OF SILICON SURFACE ETCHING BY WATER WITH SCANNING TUNNELING MICROSCOPY

被引：25

作者：

PIETSCH, GJ

KOHLER, U

HENZLER, M

机构：

[1] Institut für Festkörperphysik, Universität Hannover, W-3000 Hannover 1

来源：

CHEMICAL PHYSICS LETTERS | 1992年 / 197卷 / 4-5期

关键词：

D O I：

10.1016/0009-2614(92)85783-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

One of the key processes in wet chemical preparation of silicon surfaces for device fabrication is a final rinsing step with water after oxide removal and hydrogen-termination with hydrofluoric acid. On rinsing at elevated temperature (boiling water) the slow statistical oxidation of the surface known from conventional treatment with water at room temperature is replaced by a rapid anisotropic etching attack. On Si (111) scanning tunneling microscopy shows characteristic triangular etch defects and flat (111) terraces separated by monatomic steps along [011BAR]. The resulting surface is chemically homogeneous without any oxide. Structure and removal mechanism are compared to NH4F-etched samples.

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页码：346 / 351

页数：6

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