THERMAL-ANALYSIS OF GAAS-ALGAAS ETCHED-WELL SURFACE-EMITTING DOUBLE-HETEROSTRUCTURE LASERS WITH DIELECTRIC MIRRORS

被引：45

作者：

NAKWASKI, W ^{[1
]}

OSINSKI, M ^{[1
]}

机构：

[1] UNIV NEW MEXICO, DEPT PHYS & ASTRON, ALBUQUERQUE, NM 87131 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1993年 / 29卷 / 06期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/3.234461

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A comprehensive self-consistent thermal-electrical model is described and used to investigate thermal properties of GaAs-AlGaAs etched-well double-heterostructure vertical-cavity surface-emitting lasers (VCSEL's) with dielectric mirrors. Special attention is paid to effects of varying the active-region diameter on thermal behavior of the device. The active-region diameter is optimized with the goal of reducing the relative power loss due to heating and maximizing the optical output power. The optimal diameter, such that the excess of pumping current over the CW lasing threshold at the corresponding active-region temperature is maximum, is 16 mum.

引用

页码：1981 / 1995

页数：15

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