FAILURE PHYSICS OF INTEGRATED-CIRCUITS - A REVIEW

被引:28
作者
STOJADINOVIC, ND
机构
关键词
D O I
10.1016/0026-2714(83)91158-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:609 / 707
页数:99
相关论文
共 95 条
[1]  
ARUTYUNOV PA, 1977, MIKROELEKTRONIKA, V6, P521
[2]  
AUDAN J, 1974, FIABILITE ANAL DEFAI
[3]   ANALYSIS OF DEPOSITED GLASS LAYER DEFECTS [J].
BART, JJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, :128-135
[4]   CHIP CORROSION IN PLASTIC PACKAGES [J].
BERG, HM ;
PAULSON, WM .
MICROELECTRONICS AND RELIABILITY, 1980, 20 (03) :247-263
[5]   ELECTROMIGRATION FAILURE MODES IN ALUMINUM METALLIZATION FOR SEMICONDUCTOR DEVICES [J].
BLACK, JR .
PROCEEDINGS OF THE IEEE, 1969, 57 (09) :1587-&
[6]  
BLACK JR, 1978, 16TH IEEE ANN P REL, P233
[7]   THE TEMPERATURE-DEPENDENCE OF COMPONENT FAILURE RATE [J].
BLANKS, HS .
MICROELECTRONICS RELIABILITY, 1980, 20 (03) :297-307
[8]  
Bolin H. R., 1980, 18th Annual Proceedings of Reliability Physics, P252, DOI 10.1109/IRPS.1980.362949
[9]   CMOS RELIABILITY - A USEFUL CASE-HISTORY TO REVISE EXTRAPOLATION EFFECTIVENESS, LENGTH AND SLOPE OF THE LEARNING-CURVE [J].
BRAMBILLA, P ;
FANTINI, F ;
MALBERTI, P ;
MATTANA, G .
MICROELECTRONICS RELIABILITY, 1981, 21 (02) :191-201
[10]   EFFECTS OF DISLOCATIONS IN SILICON TRANSISTORS WITH IMPLANTED EMITTERS [J].
BULL, C ;
ASHBURN, P ;
BOOKER, GR ;
NICHOLAS, KH .
SOLID-STATE ELECTRONICS, 1979, 22 (01) :95-104