FAILURE PHYSICS OF INTEGRATED-CIRCUITS - A REVIEW

被引:28
作者
STOJADINOVIC, ND
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D O I
10.1016/0026-2714(83)91158-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:609 / 707
页数:99
相关论文
共 95 条
[21]   TESTING FOR MOS IC FAILURE MODES [J].
EDWARDS, DG .
IEEE TRANSACTIONS ON RELIABILITY, 1982, 31 (01) :9-18
[22]   VMOS RELIABILITY [J].
EDWARDS, JR ;
BHATTI, IS ;
FULLER, E .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (01) :43-48
[23]   FAILURE PHYSICS APPROACH TO IC RELIABILITY [J].
FARROW, RH ;
PARKER, GW .
MICROELECTRONICS AND RELIABILITY, 1972, 11 (02) :151-&
[24]  
FISHER AW, 1972, PRRL72TR117 RCA LABS
[25]   CMOS RELIABILITY [J].
GALLACE, LJ ;
PUJOL, HL ;
SCHNABLE, GL .
MICROELECTRONICS RELIABILITY, 1978, 17 (02) :287-304
[26]  
GALLESIO A, 1980, SEMINARIO SCI TECNIC, P481
[27]  
GLASER AB, 1977, INTEGRATED CIRCUIT E, P751
[28]  
HARPER CP, 1969, HDB ELECTRONIC PACKA, pCH7
[29]  
HAYAFUJI Y, 1977, SEMICONDUCTOR SILICO, P750
[30]  
HELMVEICH E, 1977, SEMICONDUCTOR SILICO, P626