PRECIPITATION OF GOLD INTO METASTABLE GOLD SILICIDE IN SILICON

被引:48
作者
BAUMANN, FH
SCHROTER, W
机构
[1] UNIV GOTTINGEN,INST PHYS 4,W-3400 GOTTINGEN,GERMANY
[2] SONDERFORSCH BEREICH 126,W-3400 GOTTINGEN,GERMANY
来源
PHYSICAL REVIEW B | 1991年 / 43卷 / 08期
关键词
D O I
10.1103/PhysRevB.43.6510
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report a detailed investigation of the precipitation behavior of gold in float-zone silicon from a highly supersaturated solution. Nucleation, morphology, and crystallography as well as the decomposition of the solution were examined using high-resolution electron microscopy, selected area diffraction combined with tilting experiments, Hall-effect measurements, and energy dispersive x-ray spectroscopy. After in-diffusion of gold at 1275-degrees-C annealing experiments were performed at 850-degrees-C for durations ranging from 5 min up to 35 d. It is shown that gold precipitates in small spherical particles (diameter: 10-20 nm) consisting of a metastable gold silicide. By means of selected area diffraction combined with a special tilting procedure, the unit cell is proved to be orthorhombic with lattice parameters a = 0.971 nm, b = 0.768 nm, and c = 0.703 nm. Systematic absence of reflections in several precipitate zone-axis patterns reveals the space group of the silicide to be Pnma or Pn21a. According to Hall-effect measurements the concentration of substitutional gold decreases to a few percent within 5 min annealing at 850-degrees-C. Only a part of it has precipitated in gold silicide particles, which are found at small extrinsic stacking faults. The stacking faults represent a density of self-interstitials Si(i) of about 10(18) cm-3, which according to control experiments is about a factor of 50 above the equilibrium concentration of Si(i) at 1274-degrees-C. As annealing proceeds the stacking faults disappear, and gold is finally found in spherical particles embedded stress-free into the silicon matrix.
引用
收藏
页码:6510 / 6519
页数:10
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