POLYMER MATERIALS FOR MICROLITHOGRAPHY

被引：158

作者：

REICHMANIS, E

THOMPSON, LF

机构：

[1] AT&T Bell Lab, United States

来源：

关键词：

164;

D O I：

10.1021/cr00096a001

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：1273 / 1289

页数：17

共 160 条

[1] ALLEN RD, 1987, ACS SYM SER, V346, P101
[2] EBES4 - A NEW ELECTRON-BEAM EXPOSURE SYSTEM
ALLES, DS
BIDDICK, CJ
BRUNING, JH
CLEMENS, JT
COLLIER, RJ
GERE, EA
HARRIOTT, LR
LEONE, F
LIU, R
MULROONEY, TJ
NIELSEN, RJ
PARAS, N
RICHMAN, RM
ROSE, CM
ROSENFELD, DP
SMITH, DEA
THOMSON, MGR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01): : 47 - 52
[3] ALLING E, 1985, P SOC PHOTO-OPT INST, V539, P194, DOI 10.1117/12.947835
[4] BALLANTYNE JP, 1980, MICROCIRCUIT ENG, P239
[5] BARTELT JL, 1974, APPL POLY S, V23, P139
[6] BOWDEN MJ, 1984, ACS SYM SER, V242, P135
[7] BOWDEN MJ, 1979, SOLID STATE TECHNOL, V22, P72
[8] A SENSITIVE NOVOLAC-BASED POSITIVE ELECTRON RESIST
BOWDEN, MJ
THOMPSON, LF
FAHRENHOLTZ, SR
DOERRIES, EM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) : 1304 - 1313
[9] POLY(BUTENE-1 SULFONE) - HIGHLY SENSITIVE POSITIVE RESIST
BOWDEN, MJ
THOMPSON, LF
BALLANTYNE, JP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1294 - 1296
[10] BOWDEN MJ, 1984, ACS S SERIES, V242, P153