HEATING EFFECTS IN REACTIVE ETCHING OF NB AND NB2O5

[11] GRAY DE, 1972, AM I PHYSICS HDB

[12] DRY ETCHING OF NB AND FABRICATION OF NB VARIABLE-THICKNESS-BRIDGES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) : 259 - 264

[13] NEW CHEMICAL DRY ETCHING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 : 13 - 18

[14] NON-CONTACT SURFACE-TEMPERATURE MEASUREMENT DURING REACTIVE-ION ETCHING USING FLUORESCENT POLYMER-FILMS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 749 - 751

[15] Lee Y. H., UNPUB

[16] SILICON ETCHING MECHANISM AND ANISOTROPY IN CF4+O2 PLASMA [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) : 5966 - 5973

[17] MOGAB CJ, 1977, J ELECTROCHEM SOC, V124, P1262, DOI 10.1149/1.2133542

[18] MURAKAMI M, UNPUB J APPL PHYS

[19] PLASMA ETCHING IN INTEGRATED-CIRCUIT MANUFACTURE - REVIEW [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 266 - 274

[20] REIBLE SA, 1981, IEEE T MAGN, V27, P303

[11] GRAY DE, 1972, AM I PHYSICS HDB

[12] DRY ETCHING OF NB AND FABRICATION OF NB VARIABLE-THICKNESS-BRIDGES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) : 259 - 264

[13] NEW CHEMICAL DRY ETCHING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 : 13 - 18

[14] NON-CONTACT SURFACE-TEMPERATURE MEASUREMENT DURING REACTIVE-ION ETCHING USING FLUORESCENT POLYMER-FILMS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 749 - 751

[15] Lee Y. H., UNPUB

[16] SILICON ETCHING MECHANISM AND ANISOTROPY IN CF4+O2 PLASMA [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) : 5966 - 5973

[17] MOGAB CJ, 1977, J ELECTROCHEM SOC, V124, P1262, DOI 10.1149/1.2133542

[18] MURAKAMI M, UNPUB J APPL PHYS

[19] PLASMA ETCHING IN INTEGRATED-CIRCUIT MANUFACTURE - REVIEW [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 266 - 274

[20] REIBLE SA, 1981, IEEE T MAGN, V27, P303