FABRICATION OF A DIAMOND P-N-JUNCTION DIODE USING THE CHEMICAL VAPOR-DEPOSITION TECHNIQUE

被引：20

作者：

OKANO, K

KIYOTA, H

IWASAKI, T

NAKAMURA, Y

AKIBA, Y

KUROSU, T

IIDA, M

NAKAMURA, T

机构：

[1] Department of Electronics, School of Engineering, Tokai University, Hiratsuka, Kanagawa, 259-12

来源：

SOLID-STATE ELECTRONICS | 1991年 / 34卷 / 02期

关键词：

D O I：

10.1016/0038-1101(91)90079-E

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A diamond p-n junction diode has been fabricated by the chemical vapour deposition technique. Diphosphorus pentaoxide and boron trioxide were used for the doping sources for the n- and p-type layers, respectively. The diode shows distinct rectification characteristics at 300 K room temperature. This diode shows rectification even at 370 K and this result implies the possible use of diamond as a semiconductor in high temperature conditions.

引用

页码：139 / 141

页数：3

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