COMPARATIVE-STUDIES OF HYDRODYNAMIC AND ENERGY-TRANSPORT MODELS

被引：26

作者：

SOUISSI, K

ODEH, F

TANG, HHK

GNUDI, A

机构：

[1] FAC SCI MONASTIR,DEPT MATH,5000 MONASTIR,TUNISIA

[2] IBM CORP,E FISHKILL FACIL,CTR SEMICOND RES & DEV,DEPT THEORET MODELING,HOPEWELL JCT,NY 12533

[3] IBM CORP,THOMAS J WATSON RES CTR,DEPT MATH SCI,YORKTOWN HTS,NY 10598

[4] UNIV BOLOGNA,DEPT ELECTR,I-40126 BOLOGNA,ITALY

来源：

COMPEL-THE INTERNATIONAL JOURNAL FOR COMPUTATION AND MATHEMATICS IN ELECTRICAL AND ELECTRONIC ENGINEERING | 1994年 / 13卷 / 02期

关键词：

D O I：

10.1108/eb010127

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

An energy transport model has been numerically implemented in the device simulator HFIELDS. The transport parameters for the standard hydrodynamic model and the energy transport model are calibrated by means of DAMOCLES, a two-dimensional Monte Carlo Boltzmann equation solver. We analyse the relative merits of these two models by comparing their predictions of the energy and velocity distributions for a bipolar transistor and a ballistic diode. In the cases presented, the hydrodynamic model is found to agree with the Monte Carlo results more closely than the energy transport model.

引用

页码：439 / 453

页数：15

共 11 条

[1] AN INVESTIGATION OF STEADY-STATE VELOCITY OVERSHOOT IN SILICON [J].