PREPARATION OF THIN (0.6 MU-M) CONTINUOUS MONOCRYSTALLINE SILICON OVER SIO2

被引:2
作者
JASTRZEBSKI, L
CORBOY, JF
PAGLIARO, R
SOYDAN, R
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关键词
D O I
10.1149/1.2113723
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:3056 / 3057
页数:2
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共 21 条
[1]  
CORBOY JF, 1983, RCA REV, V44, P231
[2]  
CULLEN GW, 1978, HETEROEPITAXIAL SEMI
[3]   GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].
DEAL, BE ;
GROVE, AS .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&
[4]  
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[5]  
Hall J. E., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P292
[6]   SILICON ON INSULATORS - DIFFERENT APPROACHES - A REVIEW [J].
JASTRZEBSKI, L .
JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :253-270
[7]  
JASTRZEBSKI L, 1983, RCA REV, V44, P250
[8]   GROWTH-PROCESS OF SILICON OVER SIO2 BY CVD - EPITAXIAL LATERAL OVERGROWTH TECHNIQUE [J].
JASTRZEBSKI, L ;
CORBOY, JF ;
MCGINN, JT ;
PAGLIARO, R .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (07) :1571-1580
[9]  
Jastrzebski L., 1983, 1983 Symposium on VLSI Technology. Digest of Technical Papers, P50