THE INFLUENCE OF TILTED SOURCE DRAIN IMPLANTS ON HIGH-FIELD EFFECTS IN SUBMICROMETER MOSFETS

被引：12

作者：

BAKER, FK

PFIESTER, JR

机构：

[1] Motorola Inc, Austin, TX, USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 12期

关键词：

D O I：

10.1109/16.8785

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

7

引用

收藏

页码：2119 / 2124

页数：6

相关论文

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