WELCH MEMORIAL LECTURE - THE DEVELOPMENT OF PHOTOEMISSION SPECTROSCOPY AND ITS APPLICATION TO THE STUDY OF SEMICONDUCTOR INTERFACES - OBSERVATIONS ON THE INTERPLAY BETWEEN BASIC AND APPLIED-RESEARCH

被引:8
作者
SPICER, WE
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期
关键词
D O I
10.1116/1.573016
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:461 / 470
页数:10
相关论文
共 65 条
[1]   ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF SCHOTTKY BARRIERS [J].
ALLEN, RE ;
DOW, JD .
PHYSICAL REVIEW B, 1982, 25 (02) :1423-1426
[2]   ELECTRON SCATTERING AND THE PHOTOEMISSION FROM CESIUM ANTIMONIDE [J].
APKER, L ;
TAFT, E ;
DICKEY, J .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1953, 43 (02) :78-80
[3]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[4]   PHOTOEMISSION STUDIES OF COPPER + SILVER - EXPERIMENT [J].
BERGLUND, CN ;
SPICER, WE .
PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 136 (4A) :1044-&
[5]  
BERGLUND CN, 1964, PHYS REV A-GEN PHYS, V136, P1030
[6]   THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].
Brillson, L. J. .
SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326
[7]   CHEMICAL AND ELECTRONIC-STRUCTURE OF COMPOUND SEMICONDUCTOR-METAL INTERFACES [J].
BRILLSON, LJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :652-658
[8]  
Cardona M., 1978, PHOTOEMISSION SOLIDS
[10]   INDEPENDENCE OF FERMI-LEVEL POSITION AND VALENCE-BAND EDGE DISCONTINUITY AT GAAS-GE(100) INTERFACES [J].
CHIARADIA, P ;
KATNANI, AD ;
SANG, HW ;
BAUER, RS .
PHYSICAL REVIEW LETTERS, 1984, 52 (14) :1246-1249