OXIDATION OF HYDROGEN DOPED TANTALUM FILMS ON SILICON

被引：5

作者：

OHFUJI, S

HASHIMOTO, C

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.583602

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：714 / 719

页数：6

共 22 条

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