BOTTOM-GATE POLY-SI THIN-FILM TRANSISTORS USING XECL EXCIMER-LASER ANNEALING AND ION DOPING TECHNIQUES

被引：10

作者：

FURUTA, M

KAWAMURA, T

YOSHIOKA, T

MIYATA, Y

机构：

[1] Display Technology Research Laboratory, Components and Devices Research Center, Matsushita Electric Industrial Co., LTD., Moriguchi, Osaka 570, 3-1-1, Yagumo-nakamachi

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 11期

关键词：

D O I：

10.1109/16.239735

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High mobility bottom-gate poly-Si thin film transistors (TFT's) have been successfully fabricated on a hard glass substrate using XeCl excimer laser annealing and ion doping techniques. We used an a-Si:H film which is deposited by a plasma-enhanced chemical vapor deposition (PECVD) as a precursor film, then we crystallized the a-Si film by XeCl excimer laser annealing. The maximum field effect mobility and grain size obtained were 200 cm2/V . s, (n-channel) and 250 nm, respectively. The poly-Si TFT's showed excellent transfer characteristics, and an ON/OFF current ratio of over 106 was obtained. Also we have demonstrated successful control of the threshold voltage within 4 V using an ion doping technique.

引用

页码：1964 / 1969

页数：6

共 14 条

[1] EXCIMER-LASER-ANNEALED POLY-SI THIN-FILM TRANSISTORS [J].

BROTHERTON, SD ;

MCCULLOCH, DJ ;

CLEGG, JB ;

GOWERS, JP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (02) :407-413

[2]

CHIANG A, 1991, 1991 C SOL STAT DEV, P586

[3] POLYCRYSTALLINE-SILICON DEVICE TECHNOLOGY FOR LARGE-AREA ELECTRONICS [J].

HAWKINS, WG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (04) :477-481

[4] PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE [J].

KOBAYASHI, I ;

OGAWA, T ;

HOTTA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (2A) :336-342

[5]

MAEDA H, 1992, SID 92, P47

[6] POLYCRYSTALLINE SILICON RECRYSTALLIZED WITH EXCIMER LASER IRRADIATION AND IMPURITY DOPING USING ION DOPING METHOD [J].

MIYATA, Y ;

FURUTA, M ;

YOSHIOKA, T ;

KAWAMURA, T .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (07) :3271-3275

[7]

MIYATA Y, 1992, 5TH INT MICROPROCESS, P154

[8] XECL EXCIMER LASER ANNEALING USED IN THE FABRICATION OF POLY-SI TFTS [J].

SAMESHIMA, T ;

USUI, S ;

SEKIYA, M .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) :276-278

[9] HIGH-PERFORMANCE TFTS FABRICATED BY XECL EXCIMER LASER ANNEALING OF HYDROGENATED AMORPHOUS-SILICON FILM [J].

SERA, K ;

OKUMURA, F ;

UCHIDA, H ;

ITOH, S ;

KANEKO, S ;

HOTTA, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (12) :2868-2872

[10]

Shimizu K., 1992, International Electron Devices Meeting 1992. Technical Digest (Cat. No.92CH3211-0), P669, DOI 10.1109/IEDM.1992.307449

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