OXIDATION THROUGH THE ZIRCONIA SUBSTRATES OF HETEROEPITAXIAL SILICON FILMS GROWN ON YTTRIA-STABILIZED CUBIC ZIRCONIA

被引:2
作者
GOLECKI, I
MADDOX, RL
GLASS, HL
LIN, AL
RAAB, TJ
MANASEVIT, HM
机构
关键词
D O I
10.1007/BF02654023
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:531 / 550
页数:20
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共 55 条
[1]   SELF-DIFFUSION COEFFICIENTS OF OXYGEN ION IN SINGLE-CRYSTALS OF MGO . NA12O3 SPINELS [J].
ANDO, K ;
OISHI, Y .
JOURNAL OF CHEMICAL PHYSICS, 1974, 61 (02) :625-629
[2]   CONDUCTION MECHANISM IN YTTRIA STABILIZED ZIRCONIA [J].
CASSELTON, RE ;
SCOTT, JC .
PHYSICS LETTERS A, 1967, A 25 (03) :264-+
[3]  
CHANG RPH, 1981, 3RD P S PLASM PROC 1
[4]   ENERGY-LEVELS IN SILICON [J].
CHEN, JW ;
MILNES, AG .
ANNUAL REVIEW OF MATERIALS SCIENCE, 1980, 10 :157-228
[5]   CALCIA-STABILIZED ZIRCONIA THIN-FILMS IN GAAS METAL-INSULATOR SEMICONDUCTOR TECHNOLOGY - REDUCTION OF GAAS NATIVE OXIDE [J].
CROSET, M ;
MERCANDALLI, LM ;
SIEJKA, J .
THIN SOLID FILMS, 1983, 103 (1-2) :221-242
[6]   GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].
DEAL, BE ;
GROVE, AS .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&
[7]   PLASMA ANODIZATION OF SILICON AT ROOM-TEMPERATURE [J].
DIMITRIOU, P ;
GOURRIER, S .
REVUE DE PHYSIQUE APPLIQUEE, 1981, 16 (08) :419-424
[8]   VISCOUS-FLOW OF THERMAL SIO2 [J].
EERNISSE, EP .
APPLIED PHYSICS LETTERS, 1977, 30 (06) :290-293
[9]   STRESS IN THERMAL SIO2 DURING GROWTH [J].
EERNISSE, FP .
APPLIED PHYSICS LETTERS, 1979, 35 (01) :8-10
[10]   ELECTROCHEMICAL SEMIPERMEABILITY AND ELECTRODE MICROSYSTEM IN SOLID OXIDE ELECTROLYTE CELLS [J].
FOULETIER, J ;
FABRY, P ;
KLEITZ, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (02) :204-213