ETCHING OF SILICON BY SF6 INDUCED BY ION-BOMBARDMENT

被引：33

作者：

OOSTRA, DJ ^{[1
]}

HARING, A ^{[1
]}

DEVRIES, AE ^{[1
]}

SANDERS, FHM ^{[1
]}

VANVEEN, GNA ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1986年 / 13卷 / 1-3期

关键词：

This work is part of the research program of the Stichting voor Fundamenteel Onderzoek der Materie (Foundation for Fundamental Research on Matter) and was made possible by financial support from the Neder-iandse Organisatie voor Zuiver Wetenschappelijk On-derzoek (Netherlands Organization for the Advancement of Pure Research); and the Philips Research Laboratories in Eindhoven; The Netherlands;

D O I：

10.1016/0168-583X(86)90565-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：556 / 560

页数：5

共 26 条

[1] SURFACE STUDIES OF AND A MASS BALANCE MODEL FOR AR+ ION-ASSISTED CL-2 ETCHING OF SI [J].