共 33 条
[3]
CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD
[J].
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS,
1967, 55 (12)
:2192-+
[4]
DECAY GC, 1955, BELL SYST TECH J, V34, P1149
[6]
RADIATION-INDUCED INCREASE IN SURFACE RECOMBINATION VELOCITY OF THERMALLY OXIDIZED SILICON STRUCTURES
[J].
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS,
1966, 54 (11)
:1601-+
[8]
GROVE AS, 1969, PHYSICS SEMICONDUCTO, P108