STRUCTURAL AND ELECTRONIC-PROPERTIES OF STRAINED SI/GAAS HETEROSTRUCTURES

被引：21

作者：

PERESSI, M

COLOMBO, L

RESTA, R

BARONI, S

BALDERESCHI, A

机构：

[1] UNIV MILAN,DIPARTIMENTO FIS,I-20133 MILAN,ITALY

[2] SCUOLA INT SUPER STUDI AVANZATI,I-34014 TRIESTE,ITALY

[3] ECOLE POLYTECH FED LAUSANNE,INST ROMAND RECH NUMER PHYS MAT IRRMA,PHB ECUBLENS,CH-1015 LAUSANNE,SWITZERLAND

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.48.12047

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Band offsets at lattice-mismatched heterojunctions can be tuned owing to their dependence on macroscopic strain, and hence on the substrate composition. The system studied here, GaAs/Si(001), is lattice mismatched and heterovalent, offering thus an additional flexibility, due to the intrinsic nonbulk character of the band offset at heterovalent junctions. Starting with a study of macroscopic and microscopic elasticity, we evaluate the band offset for several fully relaxed inequivalent interfaces. Both macroscopic strain and microscopic morphology strongly affect the offset between the topmost Si and GaAs valence bands, which, consequently, is tunable, in principle, by as much as 1.1 eV.

引用

页码：12047 / 12052

页数：6

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