CHARACTERIZATION OF ION-IMPLANTED INXGA1-XAS/GAAS 0.25 MU-M GATE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH FT GREATER-THAN 100 GHZ

被引：4

作者：

FENG, M ^{[1
]}

LASKAR, J ^{[1
]}

MILLER, W ^{[1
]}

KOLODZEY, J ^{[1
]}

STILLMAN, GE ^{[1
]}

LAU, CL ^{[1
]}

机构：

[1] FORD MICROELECTR INC,COLORADO SPRINGS,CO 80921

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 23期

关键词：

D O I：

10.1063/1.104809

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This work presents millimeter wave performance achieved by ion-implanted InGaAs/GaAs metal semiconductor field-effect transistor devices. A current gain cutoff frequency f(t) of 126 GHz and maximum frequency of oscillation f(max) of 232 GHz have been measured for 0.20-mu-m gate length devices. The f(t) and low-field Hall mobility data, measured at 300 and 112 K, lead us to conclude that the average electron velocity under the gate is mainly due to the high-field velocity rather than low-field electron mobility.

引用

页码：2690 / 2691

页数：2

共 7 条

[1] DOES THE 2-DIMENSIONAL ELECTRON-GAS EFFECT CONTRIBUTE TO HIGH-FREQUENCY AND HIGH-SPEED PERFORMANCE OF FIELD-EFFECT TRANSISTORS [J].