A HIGH-GAIN, LOW-NOISE, 1/2-MU-M PULSE-DOPED PSEUDOMORPHIC HEMT

被引：7

作者：

HUANG, JC

ZAITLIN, M

HOKE, W

ADLERSTEIN, M

LYMAN, P

SALEDAS, P

JACKSON, G

TONG, E

FLYNN, G

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 11期

关键词：

D O I：

10.1109/55.43120

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：511 / 513

页数：3

共 11 条

[1] DC AND MICROWAVE CHARACTERISTICS OF SUB-0.1-MU-M GATE-LENGTH PLANAR-DOPED PSEUDOMORPHIC HEMTS [J].

CHAO, PC ;

SHUR, MS ;

TIBERIO, RC ;

DUH, KHG ;

SMITH, PM ;

BALLINGALL, JM ;

HO, P ;

JABRA, AA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (03) :461-473

[2]

Eastman L. F., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P456

[3]

ENGAN GF, 1979, IEEE T MICROWAVE THE, V27, P987

[4] TWO-DIMENSIONAL SIMULATION OF SUBMICROMETER GAAS-MESFETS - SURFACE EFFECTS AND OPTIMIZATION OF RECESSED GATE STRUCTURES [J].

HELIODORE, F ;

LEFEBVRE, M ;

SALMER, G ;

ELSAYED, OL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) :824-830

[5] CURRENT-GAIN CUTOFF FREQUENCY COMPARISON OF INGAAS HEMTS [J].

HIKOSAKA, K ;

SASA, S ;

HARADA, N ;

KURODA, S .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (05) :241-243

[6]

Lester L. F., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P172, DOI 10.1109/IEDM.1988.32782

[7]

LINH N, 1987, SEMICONDUCT SEMIMET, V24, P224

[8] PULSE-DOPED ALGAAS INGAAS PSEUDOMORPHIC MODFETS [J].

MOLL, N ;

HUESCHEN, MR ;

FISCHERCOLBRIE, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) :879-886

[9] CHARGE CONTROL, DC, AND RF PERFORMANCE OF A 0.35-MU-M PSEUDOMORPHIC ALGAAS/INGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR [J].

NGUYEN, LD ;

SCHAFF, WJ ;

TASKER, PJ ;

LEPORE, AN ;

PALMATEER, LF ;

FOISY, MC ;

EASTMAN, LF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (02) :139-144

[10] HIGH-PERFORMANCE MILLIMETER-WAVE ION-IMPLANTED GAAS-MESFETS [J].

WANG, GW ;

FENG, M ;

LAU, CL ;

ITO, C ;

LEPKOWSKI, TR .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (02) :95-97

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