A NOVEL PLANARIZATION TECHNIQUE FOR OPTOELECTRONIC INTEGRATED-CIRCUITS AND ITS APPLICATION TO A MONOLITHIC ALGAAS/GAAS P-I-N FET

被引：7

作者：

MIURA, S

WADA, O

NAKAI, K

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 02期

关键词：

D O I：

10.1109/T-ED.1987.22913

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：241 / 246

页数：6

共 18 条

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[2]

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BIARD, JR .

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[6] MONOLITHIC INTEGRATION OF A VERY LOW THRESHOLD GAINASP LASER AND METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR ON SEMI-INSULATING INP [J].

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[7] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER [J].

LEHENY, RF ;

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MARTIN, RJ .

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[8]

Liao A. S. H., 1983, International Electron Devices Meeting 1983. Technical Digest, P478

[9] A MONOLITHIC 4-CHANNEL PHOTORECEIVER INTEGRATED ON A GAAS SUBSTRATE USING METAL-SEMICONDUCTOR-METAL PHOTODIODES AND FETS [J].

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SAKURAI, T .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) :634-635

[10] MONOLITHIC INTEGRATION OF A LASER DIODE, PHOTO MONITOR, AND ELECTRIC-CIRCUITS ON A SEMI-INSULATING GAAS SUBSTRATE [J].

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APPLIED OPTICS, 1984, 23 (06) :779-780

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