SELECTIVE OXIDATION USING ULTRATHIN NITROGEN-RICH SILICON SURFACE-LAYERS GROWN BY RAPID THERMAL-PROCESSING

被引：2

作者：

DEARAUJO, CAP

HUANG, YP

GALLEGOS, R

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 07期

关键词：

D O I：

10.1149/1.2097151

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2035 / 2038

页数：4

共 11 条

[1]

APPELS JA, 1970, PHILIPS RES REP, V25, P118

[2] OXIDATION RESISTANT SOL-GEL DERIVED SILICON OXYNITRIDE THIN-FILMS [J].

BROW, RK ;

PANTANO, CG .

APPLIED PHYSICS LETTERS, 1986, 48 (01) :27-29

[3] EFFECT OF THE H2O/TEOS RATIO UPON THE PREPARATION AND NITRIDATION OF SILICA SOL-GEL FILMS [J].

GLASER, PM ;

PANTANO, CG .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 63 (1-2) :209-221

[4] NITRIDATION OF SILICON AND OXIDIZED-SILICON [J].

HAYAFUJI, Y ;

KAJIWARA, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) :2102-2108

[5] DIRECT THERMAL NITRIDATION OF SILICON DIOXIDE FILMS IN ANHYDROUS AMMONIA GAS [J].

ITO, T ;

NOZAKI, T ;

ISHIKAWA, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (09) :2053-2057

[6] VERY THIN SILICON-NITRIDE FILMS GROWN BY DIRECT THERMAL-REACTION WITH NITROGEN [J].

ITO, T ;

HIJIYA, S ;

NOZAKI, T ;

ARAKAWA, H ;

SHINODA, M ;

FUKUKAWA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) :448-452

[7] THE OXIDATION-INHIBITION IN NITROGEN-IMPLANTED SILICON [J].

JOSQUIN, WJMJ ;

TAMMINGA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) :1803-1811

[8] THERMAL NITRIDATION OF SI AND SIO2 FOR VLSI [J].

MOSLEHI, MM ;

SARASWAT, KC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :106-123

[9] THERMAL NITRIDATION OF SILICON IN AMMONIA GAS - COMPOSITION AND OXIDATION RESISTANCE OF THE RESULTING FILMS [J].

MURARKA, SP ;

CHANG, CC ;

ADAMS, AC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) :996-1003

[10]

RAIDER SI, 1975, APPL PHYS LETT, V27, P149

← 1 2 →