RADIATION-DAMAGE AND ANNEALING BEHAVIOR IN BE+-IMPLANTED PURE GA(AL)SB LAYERS

被引:1
作者
PEROTIN, M
SABIR, A
GOUSKOV, L
LUQUET, H
PEREZ, A
CANUT, B
LAMBERT, B
机构
[1] UNIV LYON 1,DEPT PHYS MAT,UA 172,F-69622 VILLEURBANNE,FRANCE
[2] CTR NATL ETUD TELECOMMUN,F-22301 LANNION,FRANCE
关键词
GA(AL)SB; BE+; IMPLANTATION; DAMAGE; RESTORATION;
D O I
10.1007/BF02666011
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Implantation of Be+ ions into GaAlSb epilayers is used to realize the p+ layer of the Ga0.96Al0.04Sb p+/Ga0.96Al0.04Sb n-/GaSb n+ (1.55-mu-m) avalanche photodetector whose performances are detailed in Ref. (1). The GaAlSb layers are grown using liquid phase epitaxy (LPE); the quality of these as-grown layers is shown through photoluminescence and channeling measurements. The last part of this paper is devoted to the damaging level in the Be+-implanted layers. Some annealing techniques are presented as a mean of restoration of the implanted layers. It is clear from the results that the Be+ ion implantation leads to a low damage level in this III-V compound.
引用
收藏
页码:517 / 522
页数:6
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