OBSERVATION OF SILICON SELF-INTERSTITIAL SUPERSATURATION DURING PHOSPHORUS DIFFUSION FROM GROWTH AND SHRINKAGE OF OXIDATION-INDUCED STACKING-FAULTS

被引：13

作者：

NISHI, K ^{[1
]}

ANTONIADIS, DA ^{[1
]}

机构：

[1] MIT,CAMBRIDGE,MA 02139

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 04期

关键词：

D O I：

10.1063/1.337019

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SEMICONDUCTING SILICON

引用

页码：1117 / 1124

页数：8

共 27 条

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[3] OXIDATION-ENHANCED DIFFUSION OF ARSENIC AND PHOSPHORUS IN NEAR-INTRINSIC [100] SILICON [J].

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[4]

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[6] SUPERSATURATION OF SELF-INTERSTITIALS AND UNDERSATURATION OF VACANCIES DURING PHOSPHORUS DIFFUSION IN SILICON [J].

FAHEY, P ;

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HU, SM .

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[7] QUANTITATIVE MODEL FOR DIFFUSION OF PHOSPHORUS IN SILICON AND EMITTER DIP EFFECT [J].

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[8] ON THE DOPING DEPENDENCE OF OXIDATION-INDUCED STACKING-FAULT SHRINKAGE IN SILICON [J].

FAIR, RB ;

CARIM, A .

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[9]

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[10]

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