ON THE DOPING DEPENDENCE OF OXIDATION-INDUCED STACKING-FAULT SHRINKAGE IN SILICON

被引：7

作者：

FAIR, RB

CARIM, A

机构：

[1] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139

[2] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 10期

关键词：

D O I：

10.1149/1.2123502

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2319 / 2321

页数：3

共 8 条

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[2] CORRELATION BETWEEN THE DIFFUSION OF BORONS ATOMS AND THE GROWTH KINETICS OF OXIDATION-INDUCED STACKING-FAULTS [J].

CLAEYS, CL ;

DECLERCK, GJ ;

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[3]

CLAEYS CL, 1978, SEMICONDUCTOR CHARAC, P366

[4]

ENOMOTO Y, UNPUB

[5] OXIDATION, IMPURITY DIFFUSION, AND DEFECT GROWTH IN SILICON - AN OVERVIEW [J].

FAIR, RB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) :1360-1368

[6]

FAIR RB, 1981, APPLIED SOLID STAT B, V2, P1

[7] ANNIHILATION OF STACKING-FAULTS IN SILICON BY IMPURITY DIFFUSION [J].

HASHIMOTO, H ;

SHIBAYAMA, H ;

MASAKI, H ;

ISHIKAWA, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (12) :1899-1902

[8] COMPARISON OF CHEMICAL ETCHES FOR REVEALING (100) SILICON CRYSTAL DEFECTS [J].

SCHIMMEL, DG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) :734-741

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