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2-DIMENSIONAL NUMERICAL-SIMULATION OF TRAPPING PHENOMENA IN THE SUBSTRATE OF GAAS-MESFETS

被引：11
作者：
BARTON, TM
SNOWDEN, CM
机构：
[1] University of Leeds, Department of Electrical and Electronic Engineering, Leeds
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 06期
关键词：
D O I：
10.1109/16.106234
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A two-dimensional physical model which includes the effects of deep levels in semi-insulating GaAs is described and applied to an investigation of the effects of trapping phenomena in the substrate of a GaAs MESFET. The model is used to investigate some of the anomalous features of the operation of these devices which have in the past been attributed to traps near the channel-substrate interface. The mechanisms by which deep levels determine the detail of the transient behavior under pulsed operation is determined. In addition, frequency dependence of the output conductance, which is often observed in experimental devices, is explained in terms of a reduction in the magnitude of the substrate current at low frequencies as the trap filling varies in response to the impressed terminal voltages. The calculations reported in this paper are supported by experimental measurement of a similar device. © 1990 IEEE
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页码：1409 / 1415
页数：7
相关论文
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