PROTECTION OF INP EPI-READY WAFERS BY CONTROLLED OXIDE-GROWTH

被引：15

作者：

GALLET, D

GENDRY, M

HOLLINGER, G

OVERS, A

JACOB, G

BOUDART, B

GAUNEAU, M

LHARIDON, H

LECROSNIER, D

机构：

[1] ALCATEL ALSTHOM RECH,MARSEILLE,FRANCE

[2] CRISMATEC INPACT,MOUTIERS,FRANCE

[3] CTR NATL ETUD TELECOMMUN,F-22301 LANNION,FRANCE

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1991年 / 20卷 / 12期

关键词：

EPITAXY READY SURFACES; THERMAL OXIDATION; PHOTOCHEMICAL OXIDATION;

D O I：

10.1007/BF03030189

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxy ready InP surfaces for MBE applications have been prepared by either thermal or photochemical oxidation. The composition and thickness of these oxide layers has been determined by XPS. Oval defect densities in GaInAs epitaxial layers have been correlated with the concentration of residual oxygen at the surface after thermal desorption prior to epitaxy. An optimized thermal pretreatment has been evaluated yielding defect free layers. The presence of carbon as a major source of contamination is discussed.

引用

页码：963 / 965

页数：3

共 6 条

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