AN XPS STUDY OF THE PASSIVATING OXIDE LAYER PRODUCED ON GAAS(001) SUBSTRATE BY HEATING IN AIR ABOVE 200-DEGREES-C

被引：20

作者：

CONTOUR, JP

MASSIES, J

FRONIUS, H

PLOOG, K

机构：

[1] CNRS SOPHIA ANTIPOLIS,PHYS SOLIDE & ENERGIE SOLAIRE LAB,F-06560 VALBONNE,FRANCE

[2] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 02期

关键词：

D O I：

10.1143/JJAP.27.L167

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L167 / L169

页数：3

共 12 条

[1] CARLSON TA, 1978, J ELECTRON SPECTROSC, V1, P120
[2] Cho A. Y., 1976, U.S. patent, Patent No. [3,969,164, 3969164]
[3] GROWTH OF III-V SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY AND THEIR PROPERTIES
CHO, AY
[J]. THIN SOLID FILMS, 1983, 100 (04) : 291 - 317
[4] X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF GAAS (001) AND INP (001) CLEANING PROCEDURES PRIOR TO MOLECULAR-BEAM EPITAXY
CONTOUR, JP
MASSIES, J
SALETES, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (07): : L563 - L565
[5] GAAS SUBSTRATE PREPARATION FOR OVAL-DEFECT ELIMINATION DURING MBE GROWTH
FRONIUS, H
FISCHER, A
PLOOG, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (02): : L137 - L138
[6] ELIMINATION OF GAAS OVAL DEFECTS AND HIGH-THROUGHPUT FABRICATION OF SELECTIVELY DOPED ALXGA1-XAS/GAAS HETEROSTRUCTURES BY MBE
FRONIUS, H
FISCHER, A
PLOOG, K
[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 169 - 174
[7] SUBSTRATE CHEMICAL ETCHING PRIOR TO MOLECULAR-BEAM EPITAXY - AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF GAAS (001) SURFACES ETCHED BY THE H2SO4-H2O2-H2O SOLUTION
MASSIES, J
CONTOUR, JP
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 806 - 810
[8] X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF THE EFFECTS OF ULTRAPURE WATER ON GAAS
MASSIES, J
CONTOUR, JP
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (12) : 1150 - 1152
[9] HEATING EFFECTS ON GAAS SUBSTRATE SURFACES DURING THE MOUNTING PROCESS IN THE MOLECULAR-BEAM EPITAXY TECHNIQUE
OKUMURA, H
MISAWA, S
YOSHIDA, S
GONDA, S
[J]. THIN SOLID FILMS, 1984, 122 (02) : L97 - L100
[10] ANALYSIS OF NATIVE OXIDE-FILMS AND OXIDE SUBSTRATE REACTIONS ON III-V-SEMICONDUCTORS USING THERMOCHEMICAL PHASE-DIAGRAMS
SCHWARTZ, GP
[J]. THIN SOLID FILMS, 1983, 103 (1-2) : 3 - 16

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