THE ELECTRICAL CHARACTERISTICS OF BORON-IMPLANTED INP

被引：7

作者：

KAMIYA, Y

SHINOMURA, K

ITOH, T

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 04期

关键词：

D O I：

10.1149/1.2108676

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：780 / 784

页数：5

共 8 条

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[3]

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[6] CARRIER DEPLETION IN SULFUR DOPED EPITAXIAL GAAS LAYER BY BORON ION-IMPLANTATION [J].

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[7] COMPENSATION MECHANISMS RELATED TO BORON IMPLANTATION IN GAAS [J].

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[8] INVESTIGATION OF COMPENSATION IN IMPLANTED N-GAAS [J].

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