NITROGEN-RELATED DEEP ELECTRON TRAPS IN FLOAT ZONE SILICON

被引：12

作者：

NAUKA, K ^{[1
]}

GOORSKY, MS ^{[1
]}

GATOS, HC ^{[1
]}

LAGOWSKI, J ^{[1
]}

机构：

[1] MIT,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 12期

关键词：

D O I：

10.1063/1.96274

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1341 / 1343

页数：3

共 9 条

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[9] CONCENTRATION, SOLUBILITY, AND EQUILIBRIUM DISTRIBUTION COEFFICIENT OF NITROGEN AND OXYGEN IN SEMICONDUCTOR SILICON [J].

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