THERMAL ANNEALING OF SI-N ABSORPTION-BANDS IN NITROGEN-IMPLANTED SILICON

被引：20

作者：

STEIN, HJ

机构：

[1] Sandia Natl Lab, Albuquerque, NM,, USA, Sandia Natl Lab, Albuquerque, NM, USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 03期

关键词：

D O I：

10.1149/1.2113926

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：668 / 671

页数：4

共 24 条

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