POSITRON-ANNIHILATION STUDY OF DEFECTS CREATED IN SILICON IRRADIATED WITH ELECTRONS OF HIGH-ENERGY

被引：14

作者：

KWETE, M ^{[1
]}

SEGERS, D ^{[1
]}

DORIKENS, M ^{[1
]}

DORIKENSVANPRAET, L ^{[1
]}

CLAUWS, P ^{[1
]}

机构：

[1] STATE UNIV GHENT,CRYSTALLOG & SOLID STATE PHYS,B-9000 GHENT,BELGIUM

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 122卷 / 01期

关键词：

D O I：

10.1002/pssa.2211220112

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Lifetime and Doppler broadening measurements are carried out as a function of temperature on two pairs of silicon samples (n and p-type) irradiated with 17 MeV electrons to a dose of 4 x 10(19) e/cm2. The results obtained below the irradiation temperature (i.e. in the interval 90 to 300 K) are interpreted by assuming the presence of shallow traps. From the isochronal annealing results different annealing stages are seen in both sets of samples. During annealing defect growth is seen as an increase of the second positron lifetime.

引用

页码：129 / 138

页数：10

共 20 条

[1] DEFECT ANNEALING IN ELECTRON-IRRADIATED BORON-DOPED SILICON [J].

AWADELKARIM, OO ;

CHEN, WM ;

WEMAN, H ;

MONEMAR, B .

PHYSICAL REVIEW B, 1990, 41 (02) :1019-1027

[2] POSITRON ESCAPE FROM ANNIHILATION CENTERS IN ELECTRON-IRRADIATED SI CRYSTALS [J].

BRANDT, W ;

CHENG, LJ .

PHYSICS LETTERS A, 1975, A 50 (06) :439-440

[3] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J].

CHENG, LJ ;

CORELLI, JC ;

CORBETT, JW ;

WATKINS, GD .

PHYSICAL REVIEW, 1966, 152 (02) :761-+

[4] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J].

CORBETT, JW ;

WATKINS, GD ;

CHRENKO, RM ;

MCDONALD, RS .

PHYSICAL REVIEW, 1961, 121 (04) :1015-&

[5] INFLUENCE OF DEFECTS AND TEMPERATURE ON ANNIHILATION OF POSITRONS IN NEUTRON-IRRADIATED SILICON [J].

DANNEFAER, S ;

DEAN, GW ;

KERR, DP ;

HOGG, BG .

PHYSICAL REVIEW B, 1976, 14 (07) :2709-2714

[6] OXYGEN IN SILICON - A POSITRON-ANNIHILATION INVESTIGATION [J].

DANNEFAER, S ;

KERR, D .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (04) :1313-1321

[7]

DANNEFAER S, 1989, 8TH P INT C POS ANN, P714

[8]

DANNEFAER S, 1989, 8TH P INT C POS ANN, P86

[9] THEORETICAL FOUNDATION AND EXTENSION OF TRAPPING MODEL [J].

FRANK, W ;

SEEGER, A .

APPLIED PHYSICS, 1974, 3 (01) :61-66

[10] POSITRON TRAPPING IN ELECTRON-IRRADIATED SILICON-CRYSTALS [J].

FUHS, W ;

HOLZHAUER, U ;

RICHTER, FW .

APPLIED PHYSICS, 1980, 22 (04) :415-419

← 1 2 →