AVALANCHE INJECTION INTO OXIDE IN SILICON GATE-CONTROLLED DEVICES .2. EXPERIMENTAL RESULTS

被引：20

作者：

BULUCEA, C ^{[1
]}

机构：

[1] R&D INST ELECTR COMPONENTS, ICCE BANEASA, STR EROU IANCU NICOLAE 32, BUCHAREST, ROMANIA

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 05期

关键词：

D O I：

10.1016/0038-1101(75)90039-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：381 / 391

页数：11

相关论文

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