A COMPARISON OF HCL-GROWN AND TRICHLOROETHYLENE-GROWN OXIDES ON SILICON

被引：3

作者：

DAS, MB ^{[1
]}

STACH, J ^{[1
]}

TRESSLER, RE ^{[1
]}

GRUBBS, WH ^{[1
]}

机构：

[1] HEWLETT PACKARD CO, PALO ALTO, CA 94303 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 02期

关键词：

D O I：

10.1149/1.2115591

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：389 / 392

页数：4

共 11 条

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