ELECTRICAL CHARACTERISTICS OF MOS STRUCTURES ON LESS THAN 111 GREATER THAN AND LESS THAN 100 GREATER THAN ORIENTED N-TYPE SILICON AS INFLUENCED BY USE OF HYDROGEN-CHLORIDE DURING THERMAL OXIDATION

被引：16

作者：

BACCARANI, G

SEVERI, M

SONCINI, G

机构：

[1] UNIV BOLOGNA, FAC INGN, IST ELETTR, BOLOGNA, ITALY

[2] CONSIGLIO NAZL RICERCHE, LAB LAMEL, BOLOGNA, ITALY

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 10期

关键词：

D O I：

10.1149/1.2403278

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1436 / 1438

页数：3

共 17 条

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[2] Baccarani G., 1971, Alta Frequenza, V40, P674
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[4] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +
[5] CALZOLARI PU, 1972, 2 EUR SOL STAT DEV R
[6] PARTICULAR VIEWS ON C(V) CURVES AND APPARENT STATE DENSITY ON INTERFACE THERMAL SIO2/SI WITH SURFACE ORIENTED MOS STRUCTURES (111)
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[J]. SOLID STATE COMMUNICATIONS, 1971, 9 (16) : 1347 - +
[7] DESCRIPTION OF SIO2-SI INTERFACE PROPERTIES BY MEANS OF VERY LOW FREQUENCY MOS CAPACITANCE MEASUREMENTS
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VAPAILLE, A
[J]. SURFACE SCIENCE, 1971, 28 (01) : 157 - +
[8] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON
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[9] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON
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SAH, CT
LEISTIKO, O
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2695 - &
[10] EFFECT OF HCL AND CL2 ON THERMAL OXIDATION OF SILICON
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CHENG, YC
COLTON, DR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (03) : 388 - &

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