OPTICALLY INDUCED GLIDE MOTION OF MISFIT DISLOCATIONS IN INP/IN1-XGAXAS1-YPY/INP DOUBLE HETEROSTRUCTURE

被引：5

作者：

KOMIYA, S

YAMAGUCHI, A

UMEBU, I

KOTANI, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 02期

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D O I：

10.1063/1.332110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1058 / 1061

页数：4

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[1] THERMAL-EXPANSION PARAMETERS OF SOME GAXIN1-XASYP1-X ALLOYS
BISARO, R
MERENDA, P
PEARSALL, TP
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 100 - 102
[2] VELOCITIES AND DENSITIES OF DISLOCATIONS IN GERMANIUM AND OTHER SEMICONDUCTOR CRYSTALS
CHAUDHURI, AR
PATEL, JR
RUBIN, LG
[J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) : 2736 - &
[3] DISLOCATION VELOCITIES IN GAAS
CHOI, SK
MIHARA, M
NINOMIYA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (05) : 737 - 745
[4] EFFECT OF IMPURITIES ON INDIVIDUAL DISLOCATION MOBILITY IN SILICON
EROFEEV, VN
NIKITENKO, VI
OSVENSKII, VB
[J]. PHYSICA STATUS SOLIDI, 1969, 35 (01): : 79 - +
[5] LIGHT-INDUCED MOTION OF MISFIT DISLOCATIONS IN GA1-XALXAS1-YPY-GAAS HETEROJUNCTIONS
FUJIWARA, T
IMAI, H
TAKAGI, N
TAKUSAGAWA, M
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 759 - 761
[6] NEW PHENOMENA ON MISFIT DISLOCATIONS IN A GAALASP-GAAS HETEROJUNCTION UNDER LIGHT IRRADIATION
FUJIWARA, T
TAKAGI, N
IMAI, H
KOMIYA, S
TAKUSAGAWA, M
TAKANASHI, H
MISUGI, T
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) : 616 - 619
[7] LATTICE DEFECT STRUCTURE OF DEGRADED INGAASP-INP DOUBLE-HETEROSTRUCTURE LASERS
ISHIDA, K
KAMEJIMA, T
MATSUMOTO, Y
ENDO, K
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 16 - 17
[8] RECOMBINATION ENHANCED DEFECT REACTIONS
KIMERLING, LC
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (11-1) : 1391 - 1401
[9] KOMIYA S, UNPUB
[10] ENHANCED GLIDE OF DISLOCATIONS IN GAAS SINGLE-CRYSTALS BY ELECTRON-BEAM IRRADIATION
MAEDA, K
TAKEUCHI, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) : L165 - L168