LIGHT-INDUCED MOTION OF MISFIT DISLOCATIONS IN GA1-XALXAS1-YPY-GAAS HETEROJUNCTIONS

被引:6
作者
FUJIWARA, T
IMAI, H
TAKAGI, N
TAKUSAGAWA, M
机构
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D O I
10.1063/1.90494
中图分类号
O59 [应用物理学];
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页码:759 / 761
页数:3
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共 9 条
  • [1] PHOTOPLASTIC EFFECT IN WURTZITE AND SPHALERITE STRUCTURE II-VI COMPOUNDS
    AHLQUIST, CN
    CARROLL, MJ
    STROEMPL, P
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (02) : 337 - &
  • [2] DISLOCATION VELOCITIES IN GAAS
    CHOI, SK
    MIHARA, M
    NINOMIYA, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (05) : 737 - 745
  • [3] DEGRADATION OF CW GAAS DOUBLE-HETEROJUNCTION LASERS AT 300-K
    DELOACH, BC
    HAKKI, BW
    HARTMAN, RL
    DASARO, LA
    [J]. PROCEEDINGS OF THE IEEE, 1973, 61 (07) : 1042 - 1044
  • [4] NEW PHENOMENA ON MISFIT DISLOCATIONS IN A GAALASP-GAAS HETEROJUNCTION UNDER LIGHT IRRADIATION
    FUJIWARA, T
    TAKAGI, N
    IMAI, H
    KOMIYA, S
    TAKUSAGAWA, M
    TAKANASHI, H
    MISUGI, T
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) : 616 - 619
  • [5] IMAI H, 1976, 5TH IEEE INT SEM CON
  • [6] INJECTION-STIMULATED DISLOCATION-MOTION IN SEMICONDUCTORS
    KIMERLING, LC
    PETROFF, P
    LEAMY, HJ
    [J]. APPLIED PHYSICS LETTERS, 1976, 28 (06) : 297 - 300
  • [7] MATTHEWS JW, 1974, EPITAXIAL GROWTH
  • [8] OBSERVATION AND ANALYSIS OF VERY RAPID OPTICAL DEGRADATION OF GAAS-GAALAS DH LASER MATERIAL
    MONEMAR, B
    WOOLHOUSE, GR
    [J]. APPLIED PHYSICS LETTERS, 1976, 29 (09) : 605 - 607
  • [9] ELIMINATION OF DISLOCATIONS IN HETEROEPITAXIAL LAYERS BY CONTROLLED INTRODUCTION OF INTERFACIAL MISFIT DISLOCATIONS
    ROZGONYI, GA
    PETROFF, PM
    PANISH, MB
    [J]. APPLIED PHYSICS LETTERS, 1974, 24 (06) : 251 - 254