CHARGE DISCHARGE DYNAMICS OF DISORDER INDUCED GAP STATE CONTINUUM AT COMPOUND SEMICONDUCTOR INSULATOR INTERFACES

被引：8

作者：

HE, L

HASEGAWA, H

LUO, J

OHNO, H

机构：

来源：

APPLIED SURFACE SCIENCE | 1988年 / 33-4卷

关键词：

D O I：

10.1016/0169-4332(88)90412-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：1030 / 1036

页数：7

共 10 条

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