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VERTICAL CHANNEL JFET FABRICATED USING SILICON PLANAR TECHNOLOGY
被引:8
作者
:
OZAWA, O
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO SHIBAURA ELECT CO LTD, TOSHIBA RES & DEV CTR, KAWASAKI, JAPAN
OZAWA, O
IWASAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO SHIBAURA ELECT CO LTD, TOSHIBA RES & DEV CTR, KAWASAKI, JAPAN
IWASAKI, H
MURAMOTO, K
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO SHIBAURA ELECT CO LTD, TOSHIBA RES & DEV CTR, KAWASAKI, JAPAN
MURAMOTO, K
机构
:
[1]
TOKYO SHIBAURA ELECT CO LTD, TOSHIBA RES & DEV CTR, KAWASAKI, JAPAN
[2]
TOKYO SHIBAURA ELECT CO LTD, TOSHIBA TRANSISTOR WORKS, KAWASAKI, JAPAN
来源
:
IEEE JOURNAL OF SOLID-STATE CIRCUITS
|
1976年
/ 11卷
/ 04期
关键词
:
D O I
:
10.1109/JSSC.1976.1050768
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:511 / 518
页数:8
相关论文
共 16 条
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ONEIL, D
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GICQUEL, R
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GICQUEL, R
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GRIDISTOR DEVELOPMENT FOR MICROWAVE POWER REGION
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ZULEEG, R
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ZULEEG, R
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SOLID-STATE ELECTRONICS,
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←
1
2
→
共 16 条
[11]
THEORY OF SURFACE GATE DIELECTRIC TRIODE
[J].
RITTNER, ES
论文数:
0
引用数:
0
h-index:
0
RITTNER, ES
;
NEUMARK, GF
论文数:
0
引用数:
0
h-index:
0
NEUMARK, GF
.
SOLID-STATE ELECTRONICS,
1966,
9
(09)
:885
-&
[12]
A UNIPOLAR STRUCTURE APPLYING LATERAL DIFFUSION
[J].
ROOSILD, SA
论文数:
0
引用数:
0
h-index:
0
ROOSILD, SA
;
DOLAN, RP
论文数:
0
引用数:
0
h-index:
0
DOLAN, RP
;
ONEIL, D
论文数:
0
引用数:
0
h-index:
0
ONEIL, D
.
PROCEEDINGS OF THE IEEE,
1963,
51
(07)
:1059
-&
[13]
SAKAI K, 1974, POWER ELECTRONICS SP, P214
[14]
GRIDISTOR - NEW FIELD-EFFECT DEVICE
[J].
TESZNER, S
论文数:
0
引用数:
0
h-index:
0
TESZNER, S
;
GICQUEL, R
论文数:
0
引用数:
0
h-index:
0
GICQUEL, R
.
PROCEEDINGS OF THE IEEE,
1964,
52
(12)
:1502
-&
[15]
GRIDISTOR DEVELOPMENT FOR MICROWAVE POWER REGION
[J].
TESZNER, S
论文数:
0
引用数:
0
h-index:
0
TESZNER, S
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1972,
ED19
(03)
:355
-&
[16]
MULTI-CHANNEL FIELD-EFFECT TRANSISTOR THEORY AND EXPERIMENT
[J].
ZULEEG, R
论文数:
0
引用数:
0
h-index:
0
ZULEEG, R
.
SOLID-STATE ELECTRONICS,
1967,
10
(06)
:559
-+
←
1
2
→