VERTICAL CHANNEL JFET FABRICATED USING SILICON PLANAR TECHNOLOGY

被引:8
作者
OZAWA, O
IWASAKI, H
MURAMOTO, K
机构
[1] TOKYO SHIBAURA ELECT CO LTD, TOSHIBA RES & DEV CTR, KAWASAKI, JAPAN
[2] TOKYO SHIBAURA ELECT CO LTD, TOSHIBA TRANSISTOR WORKS, KAWASAKI, JAPAN
关键词
D O I
10.1109/JSSC.1976.1050768
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:511 / 518
页数:8
相关论文
共 16 条
[11]   THEORY OF SURFACE GATE DIELECTRIC TRIODE [J].
RITTNER, ES ;
NEUMARK, GF .
SOLID-STATE ELECTRONICS, 1966, 9 (09) :885-&
[12]   A UNIPOLAR STRUCTURE APPLYING LATERAL DIFFUSION [J].
ROOSILD, SA ;
DOLAN, RP ;
ONEIL, D .
PROCEEDINGS OF THE IEEE, 1963, 51 (07) :1059-&
[13]  
SAKAI K, 1974, POWER ELECTRONICS SP, P214
[14]   GRIDISTOR - NEW FIELD-EFFECT DEVICE [J].
TESZNER, S ;
GICQUEL, R .
PROCEEDINGS OF THE IEEE, 1964, 52 (12) :1502-&
[15]   GRIDISTOR DEVELOPMENT FOR MICROWAVE POWER REGION [J].
TESZNER, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (03) :355-&
[16]   MULTI-CHANNEL FIELD-EFFECT TRANSISTOR THEORY AND EXPERIMENT [J].
ZULEEG, R .
SOLID-STATE ELECTRONICS, 1967, 10 (06) :559-+