A RE-EXAMINATION OF PRACTICAL PERFORMANCE LIMITS OF SCALED N-CHANNEL AND P-CHANNEL MOS DEVICES FOR VLSI

被引：27

作者：

SHICHIJO, H

机构：

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 10期

关键词：

D O I：

10.1016/0038-1101(83)90072-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：969 / 986

页数：18

共 33 条

[1] MODELS FOR COMPUTER-SIMULATION OF COMPLETE IC FABRICATION PROCESS [J].

ANTONIADIS, DA ;

DUTTON, RW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :490-500

[2] SHORT-CHANNEL MOSFETS IN THE PUNCHTHROUGH CURRENT MODE [J].

BARNES, JJ ;

SHIMOHIGASHI, K ;

DUTTON, RW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :446-453

[3] MODELS FOR CONTACTS TO PLANAR DEVICES [J].

BERGER, HH .

SOLID-STATE ELECTRONICS, 1972, 15 (02) :145-&

[4]

BLAIR JC, UNPUB

[5] GENERALIZED GUIDE FOR MOSFET MINIATURIZATION [J].

BREWS, JR ;

FICHTNER, W ;

NICOLLIAN, EH ;

SZE, SM .

ELECTRON DEVICE LETTERS, 1980, 1 (01) :2-4

[6]

Chatterjee P. K., 1980, International Electron Devices Meeting. Technical Digest, P28

[7]

Chatterjee P. K., 1980, IEEE Electron Device Letters, VEDL-1, P220, DOI 10.1109/EDL.1980.25295

[8] VELOCITY OF SURFACE CARRIERS IN INVERSION-LAYERS ON SILICON [J].

COEN, RW ;

MULLER, RS .

SOLID-STATE ELECTRONICS, 1980, 23 (01) :35-40

[9]

DEMOULIN E, 1979, IEDM, P34

[10]

Dennard R. H., 1972, IEDM, P168

← 1 2 3 4 →