STUDY OF THE GROWTH MECHANISMS OF AMORPHOUS-CARBON FILMS BY ISOTOPIC TRACING METHODS

被引:5
作者
PERRIERE, J [1 ]
LAURENT, A [1 ]
ENARD, JP [1 ]
机构
[1] UNIV PARIS 06,F-75251 PARIS 05,FRANCE
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1992年 / 11卷 / 1-4期
关键词
D O I
10.1016/0921-5107(92)90238-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The plasma-assisted deposition of amorphous hydrogenated carbon films was studied by isotopic tracing methods. Carbon films first grown in a methane plasma with natural isotopic composition (C-12 and hydrogen) were further grown using highly enriched C-13 or deuterium methane discharges. The influence of the energy of the impinging particles on the growing amorphous carbon layer was studied in a multipolar plasma system. Rutherford backscattering spectrometry, nuclear reaction analysis, proton-enhanced scattering and elastic recoil detection analysis were used to determine the composition of the films and the depth distribution of the isotopes. The results showed the absence of large sputtering effects, even with plasma conditions in which a highly energetic (above 500 eV) ionic bombardment of the deposited layer occurs. A large exchange phenomenon between the atoms already fixed in the film and those present in the plasma was not evidenced in the case of the carbon species. On the contrary, a large exchange phenomenon was evidenced between the hydrogen atoms initially incorporated in the amorphous carbon layers, and deuterium atoms coming from the plasma. This atomic exchange appears to be due to the ionic bombardment during the growth, and it strongly depends on the energy of the impinging particles.
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页码:347 / 351
页数:5
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