STUDY OF OXYGEN-TRANSPORT PROCESSES DURING PLASMA ANODIZATION OF SI BETWEEN ROOM-TEMPERATURE AND 600-DEGREES-C

被引：42

作者：

PERRIERE, J

SIEJKA, J

CHANG, RPH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 10期

关键词：

D O I：

10.1063/1.333800

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2716 / 2724

页数：9

共 28 条

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