BORON DOPING EFFECT ON SILICON FILM DEPOSITION IN THE SI2H6-B2H6-HE GAS SYSTEM

被引：49

作者：

NAKAYAMA, S

KAWASHIMA, I

MUROTA, J

机构：

[1] NTT, Atsugi, Jpn, NTT, Atsugi, Jpn

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 08期

关键词：

D O I：

10.1149/1.2109002

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1721 / 1724

页数：4

共 11 条

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