MICROSCOPIC AND MACROSCOPIC UNIFORMITY CONTROL IN PLASMA-ETCHING

被引：45

作者：

GIAPIS, KP

SCHELLER, GR

GOTTSCHO, RA

HOBSON, WS

LEE, YH

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 10期

关键词：

D O I：

10.1063/1.103532

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By cooling substrates to low temperatures (-40°C), plasma etching of AlGaAs/AlAs/GaAs structures is performed in an ion-activated, surface reaction limited regime. As a result, microscopic and macroscopic uniformity are vastly improved and etching is independent of gas flow patterns, plasma geometry, and reactor loading. Because the reactant is concentrated on the surface, etching rates remain large.

引用

页码：983 / 985

页数：3

共 20 条

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