SURFACE STATE DENSITY EVALUATION USING HIGH-FREQUENCY MOS CAPACITANCE TECHNIQUE

被引:16
作者
KATTO, H [1 ]
ITOH, Y [1 ]
机构
[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1974年 / 21卷 / 02期
关键词
D O I
10.1002/pssa.2210210228
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:627 / 637
页数:11
相关论文
共 17 条
[1]   LOW-LEVEL CURRENTS IN INSULATED GATE FIELD-EFFECT TRANSISTORS [J].
BARRON, MB .
SOLID-STATE ELECTRONICS, 1972, 15 (03) :293-+
[2]   FAST INTERFACE-STATE LOSSES IN CHARGE-COUPLED DEVICES [J].
CARNES, JE ;
KOSONOCKY, WF .
APPLIED PHYSICS LETTERS, 1972, 20 (07) :261-+
[3]   PHYSICAL LIMITATIONS OF MOS STRUCTURES [J].
DAS, MB .
SOLID-STATE ELECTRONICS, 1969, 12 (05) :305-+
[4]   FREQUENCY-RESPONSE OF SI-SIO2 INTERFACE STATES ON THIN OXIDE MOS CAPACITORS [J].
EATON, DH ;
SAH, CT .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 12 (01) :95-+
[5]  
FU HS, 1972, IEEE T ELECTRON DEVI, VED19, P273
[6]   SURFACE STATES IN SILICON FROM CHARGES IN OXIDE COATING [J].
GOETZBERGER, A ;
HEINE, V ;
NICOLLIAN, EH .
APPLIED PHYSICS LETTERS, 1968, 12 (03) :95-+
[7]   DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J].
GRAY, PV ;
BROWN, DM .
APPLIED PHYSICS LETTERS, 1966, 8 (02) :31-&
[8]   SIMPLE PHYSICAL MODEL FOR SPACE-CHARGE CAPACITANCE OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].
GROVE, AS ;
SAH, CT ;
SNOW, EH ;
DEAL, BE .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (08) :2458-&
[9]   FREQUENCY-RESPONSE OF SURFACE STATE ADMITTANCE IN WEAKLY INVERTED THIN SIO2-SI MOS CAPACITORS [J].
KATTO, H ;
SAH, CT .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 13 (02) :417-+
[10]   IMPEDANCE OF SEMICONDUCTOR-INSULATOR-METAL CAPACITORS [J].
LEHOVEC, K ;
SLOBODSKOY, A .
SOLID-STATE ELECTRONICS, 1964, 7 (01) :59-79