FERMI-LEVEL EFFECTS IN A-SI-H PHOTOCONDUCTIVITY

[1] PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON [J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 695 - 712

[2] IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (02) : 109 - 112

[3] COLLINS PW, 1982, PHYSREV B, V25, P5762

[4] ESTIMATION OF LOCALIZED STATE DISTRIBUTION PROFILES IN UNDOPED AND DOPED A-SI-H BY MEASURING SPACE-CHARGE-LIMITED CURRENT [J]. SOLID STATE COMMUNICATIONS, 1982, 44 (06) : 927 - 930

[5] ESTIMATION METHODS FOR LOCALIZED-STATE DISTRIBUTION PROFILES IN UNDOPED AND PHOSPHOROUS-DOPED A-SI-H [J]. PHYSICAL REVIEW B, 1983, 27 (08): : 4955 - 4960

[6] DISPERSIVE TRANSPORT AND RECOMBINATION LIFETIME IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW LETTERS, 1981, 46 (05) : 371 - 374

[7] THE EFFECTS OF BAND BENDING ON THE PHOTOCONDUCTIVITY IN A-SI-H [J]. PHYSICA B & C, 1983, 117 (MAR): : 883 - 885

[8] THERMOELECTRIC-POWER IN PHOSPHORUS DOPED AMORPHOUS SILICON [J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 541 - 551

[9] AMORPHOUS-SILICON PHOTOCONDUCTIVE SENSOR [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) : 251 - 256

[10] EFFECT OF RECOMBINATION ON TRANSIENT PHOTOCONDUCTIVITY IN A-SI-H [J]. PHYSICAL REVIEW B, 1982, 26 (08): : 4714 - 4716

[1] PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON [J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 695 - 712

[2] IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (02) : 109 - 112

[3] COLLINS PW, 1982, PHYSREV B, V25, P5762

[4] ESTIMATION OF LOCALIZED STATE DISTRIBUTION PROFILES IN UNDOPED AND DOPED A-SI-H BY MEASURING SPACE-CHARGE-LIMITED CURRENT [J]. SOLID STATE COMMUNICATIONS, 1982, 44 (06) : 927 - 930

[5] ESTIMATION METHODS FOR LOCALIZED-STATE DISTRIBUTION PROFILES IN UNDOPED AND PHOSPHOROUS-DOPED A-SI-H [J]. PHYSICAL REVIEW B, 1983, 27 (08): : 4955 - 4960

[6] DISPERSIVE TRANSPORT AND RECOMBINATION LIFETIME IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW LETTERS, 1981, 46 (05) : 371 - 374

[7] THE EFFECTS OF BAND BENDING ON THE PHOTOCONDUCTIVITY IN A-SI-H [J]. PHYSICA B & C, 1983, 117 (MAR): : 883 - 885

[8] THERMOELECTRIC-POWER IN PHOSPHORUS DOPED AMORPHOUS SILICON [J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 541 - 551

[9] AMORPHOUS-SILICON PHOTOCONDUCTIVE SENSOR [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) : 251 - 256

[10] EFFECT OF RECOMBINATION ON TRANSIENT PHOTOCONDUCTIVITY IN A-SI-H [J]. PHYSICAL REVIEW B, 1982, 26 (08): : 4714 - 4716