X-RAY PHOTOEMISSION SPECTROSCOPY CHARACTERIZATION OF SILICON SURFACES AFTER CF4/H2 MAGNETRON ION ETCHING - COMPARISONS TO REACTIVE ION ETCHING

被引：27

作者：

OEHRLEIN, GS

BRIGHT, AA

ROBEY, SW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 03期

关键词：

D O I：

10.1116/1.575222

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1989 / 1993

页数：5

共 18 条

[11] SILICON ETCHING MECHANISMS IN A CF4/H2 GLOW-DISCHARGE [J].

OEHRLEIN, GS ;

WILLIAMS, HL .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) :662-672

[12] INVESTIGATION OF REACTIVE-ION-ETCHING-RELATED FLUOROCARBON FILM DEPOSITION ONTO SILICON AND A NEW METHOD FOR SURFACE RESIDUE REMOVAL [J].

OEHRLEIN, GS ;

CLABES, JG ;

SPIRITO, P .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (05) :1002-1008

[13]

OEHRLEIN GS, 1987, S P SERIES, V98, P229

[14]

OEHRLEIN GS, 1987, VIDE COUCHES MINCE S, V237, P149

[15]

OKANO H, 1982, PLASMA PROCESSING, P206

[16] GLOW-DISCHARGE POLYMERIZATION OF TETRAFLUOROETHYLENE, 1,1 DIFLUOROETHYLENE, AND CHLOROTRIFLUOROETHYLENE [J].

RICE, DW ;

OKANE, DF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (09) :1308-1312

[17] DIAGNOSTICS OF LOW-PRESSURE OXYGEN RF PLASMAS AND THE MECHANISM FOR POLYMER ETCHING - A COMPARISON OF REACTIVE SPUTTER ETCHING AND MAGNETRON SPUTTER ETCHING [J].

STEINBRUCHEL, C ;

CURTIS, BJ ;

LEHMANN, HW ;

WIDMER, R .

IEEE TRANSACTIONS ON PLASMA SCIENCE, 1986, 14 (02) :137-144

[18] EMPIRICAL ATOMIC SENSITIVITY FACTORS FOR QUANTITATIVE-ANALYSIS BY ELECTRON-SPECTROSCOPY FOR CHEMICAL-ANALYSIS [J].

WAGNER, CD ;

DAVIS, LE ;

ZELLER, MV ;

TAYLOR, JA ;

RAYMOND, RH ;

GALE, LH .

SURFACE AND INTERFACE ANALYSIS, 1981, 3 (05) :211-225

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