INVESTIGATION OF REACTIVE-ION-ETCHING-RELATED FLUOROCARBON FILM DEPOSITION ONTO SILICON AND A NEW METHOD FOR SURFACE RESIDUE REMOVAL

被引:39
作者
OEHRLEIN, GS
CLABES, JG
SPIRITO, P
机构
关键词
D O I
10.1149/1.2108695
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:1002 / 1008
页数:7
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